James joined Zyvex Labs in 2010 as a Research Scientist. Before returning to his roots — hot STM of hydrogen and disilane on Si(001) — when he joined Zyvex, James worked at UCSB, UCLA and HRL, the National Institute for Materials Science (Tsukuba, Japan) as an Independent Research Fellow, and was a member of the Oxford University QIP IRC. Finally, he worked with Prof. Renner at the University of Geneva setting up a new research group. Throughout his career, he has used STM to study atomic-scale chemistry, atomic-scale self-assembled nanostructures and epitaxial growth processes on semiconductors, with a particular emphasis on close collaboration with computational modellers. Of 76 peer-reviewed articles (>1500 citations), 22 relate to hydrogen, ammonia (NH3) and disilane on Si(001) and ~50% were written jointly with DFT modelers.

James has a BEng and MA (Oxon) in Metallurgy and Science of Materials (1993) and a DPhil (Oxon) in Materials Science (1996).

Oct 2010 Zyvex Labs LLC, Richardson, TX. Research Scientist

Joined DARPA project “Atomically Precise Manufacturing”, part of DARPA Tip-Based Nanofabrication program (TBN). Demonstrated layer-by-layer growth of Si and Ge using Tip-based Patterned Epitaxy. Part of team working on research projects from ARO developing the ZyVector tool to convert STM microscopes into STM lithography systems, and the DARPA “Atoms to Product” program.

Chairman of the Industrial Advisory Board for The Centre for Doctoral Training in Advanced Characterization of Materials, Imperial College and University College London.

Jun 2007 Université of Genève, Suisse. Mâitre d’assistants (Senior Postdoc),

Startup of new research group of Prof. Renner, focussed on magnetic properties of nanoscale systems. Played major role in specification and installation of new Omicron LT-STM system.

Designing and building new “Mott-STM” to measure spin properties locally.

Mar. 2008: Co-PI: SNSF grant (ca. $600k /3 yrs) awarded: “Growth of magnetic atomic chains on nanoline templates.”

Nov 2004 International Centre for Young Scientists, National Institute for Materials Science, Tsukuba, Japan ICYS Fellow in Nanomaterials.

Independent Research Fellowship. Research budget of ¥5 million (ca. $50,000) p.a.

Developed “nanoline templating” for growth of self-assembled arrays of metallic nanostructures on Si(001). Characterization of the nanowires, nanocluster arrays.

Offered permanent researcher position at NIMS, Jan.2007.

July 2002 Materials Department, Oxford University, Oxford, U.K. Postdoctoral Research Fellow as part of LINK project entitled “Nanoelectronics at the Quantum Edge” Goal: To implement a quantum logic device using spin-active metallofullerenes as qubits.

Collaboration with Hitachi Cambridge Lab and National Physical Lab, Teddington (NPL). Supervised a Part II undergraduate student, and a postgraduate student.

March 2001 Japanese Science and Technology Agency Fellowship based at AIST (formerly ETL), Tsukuba, Japan. 3/2001 – 4/2002 as part of project entitled “Active Atomic-Scale Interconnects”

The project aimed to measure physical and chemical properties of Bi nanolines.

Learnt use of atomistic modelling code, and used it to determine structure of Bi nanolines.

Aug-Nov 2000 Postdoctoral Researcher of Bi nanowires at ETL, Tsukuba, Japan (now AIST).

1998-2000 UCLA and HRL Laboratories, Malibu, CA, USA as part of NSF/DARPA “Virtual Integrated Prototyping” project, Postdoctoral Researcher.

Refurbishment and operation of ultra-high vacuum (UHV) molecular beam epitaxy (MBE) system for growth of GaAs, InAs, AlSb. Performed MBE preparation of As- and In-rich InAs surfaces, and Sb-terminated InAs. Developed RHEED analysis process for monitoring of surface morphology of InAs and Sb-InAs.

Played key role in procurement and installation of Omicron Large-Sample UHV STM system at HRL labs.

Took initiative in promoting interaction between experimentalists and theoreticians to drive progress towards overall project goals.

1996-1998 University of California, Santa Barbara,  Dept. Chemical Engineering, Santa Barbara, CA, USA, Postdoctoral researcher in the group of Prof. Henry Weinberg. Supervised two graduate students in the lab, and in writing their theses.

1993-1996  D.Phil. Materials Department, Oxford University. ‘Diffusion and reaction of small adsorbates on silicon, using an elevated-temperature scanning tunnelling microscope(STM)’  Viva date: 18th December 1996.

1989-1993  Metallurgy and Materials Science, St. Anne’s College, Oxford.  B.A. (Hons.) 1st class.

  • 7,799,132  Patterned atomic layer epitaxy   September 21, 2010

 

 

Member of Materials Research Society

Member of Institute of Physics

Feb. 2001 STA Research Fellowship at AIST, Tsukuba, Japan.

Aug. 2004 ICYS Independent Research Fellowship at NIMS, Tsukuba, Japan.

  1. Identification of the Si(001) missing dimer defect structure using low bias voltage STM and LDA modelling
    J. H. G. Owen, D. R. Bowler, C. M. Goringe, K. Miki, and G. A. D. Briggs
    Surf. Sci. Lett.  341  L1042  (1995)  10.1016/0039-6028(95)00794-6 37 Citations
  2. Hydrogen diffusion on Si(001)
    J. H. G. Owen, D. R. Bowler, C. M. Goringe, K. Miki, and G. A. D. Briggs
    Phys. Rev. B  54  14153  (1996)  10.1103/PhysRevB.54.14153 79 Citations
  3. A proposed structure for the nucleus for GSMBE of Group IV semiconductors.
    J. H. G. Owen, K. Miki, D. R. Bowler, C. M. Goringe, and G. A. D. Briggs
    Surf. Sci. Lett.  382  L678-85  (1997)  10.1016/S0039-6028(97)00135-0 16 Citations
  4. Gas-source Growth of Si(001) II:Effect of hydrogen
    J. H. G. Owen, K. Miki, D. R. Bowler, C. M. Goringe, I. Goldfarb, and G. A. D. Briggs
    Surf. Sci.  394  91-104  (1997)  10.1016/S0039-6028(97)00591-8 24 Citations
  5. Gas-source Growth of Si(001) I:Nucleation Mechanisms
    J. H. G. Owen, K. Miki, D. R. Bowler, C. M. Goringe, I. Goldfarb, and G. A. D. Briggs
    Surf. Sci.  394  79-90  (1997)  10.1016/S0039-6028(97)00592-X 27 Citations
  6. Gas-source Growth of Si(001) III:Nucleation and growth of Ge/Si(001)
    I. Goldfarb, J. H. G. Owen, K. Miki, D. R. Bowler, C. M. Goringe, and G. A. D. Briggs
    Surf. Sci.  394  105-118  (1997)  10.1016/S0039-6028(97)00634-1 39 Citations
  7. Competing growth mechanisms of Ge/Si(001) coherent clusters.
    I. Goldfarb, P. T. Hayden, J. H. G. Owen, and G. A. D. Briggs
    Phys. Rev. B  56  10459-68  (1997)  10.1103/PhysRevB.56.10459 64 Citations
  8. Nucleation of “Hut” Pits and Clusters during GSMBE of Ge/Si(001) in in-situ STM
    I. Goldfarb, P. T. Hayden, J. H. G. Owen, and G. A. D. Briggs
    Phys. Rev. Lett.  78  3959-62  (1997)  10.1103/PhysRevLett.78.3959 106 Citations
  9. Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies.
    I. Goldfarb, J. H. G. Owen, P. T. Hayden, K. Miki, and G. A. D. Briggs
    Microscopy of Semiconducting Materials 10, Inst. Phys. Conf. Ser.  157  597-600  (1997)  Citations
  10. Chemistry of [(t-butyl)GaS]4 on Si(100)-(2×1).
    R. I. Pelzel, A. B. Hopcus, J. H. G. Owen, B. Z. Nosho, and W. H. Weinberg
    J. Vac. Sci. Technol. B  16  2399-2403  (1998)  10.1116/1.590181 2 Citations
  11. In situ observation of gas-source molecular beam epitaxy of silicon and germanium on Si(001).
    I. Goldfarb, J. H. G. Owen, D. R. Bowler, C. M. Goringe, P. T. Hayden, K. Miki, D. G. Pettifor, and G. A. D. Briggs
    J. Vac. Sci. Technol. A  16  1938-43  (1998)  10.1116/1.581200 20 Citations
  12. Diffusion of paired hydrogen on Si(001)
    D. R. Bowler, J. H. G. Owen, K. Miki, and G. A. D. Briggs
    Phys. Rev. B  57  8790  (1998)  10.1103/PhysRevB.57.8790 33 Citations
  13. Scanning tunneling microscopy study of benzene adsorption on Si(100)-(2×1).
    K. W. Self, R. I. Pelzel, J. H. G. Owen, C. Yan, and W. H. Weinberg
    J. Vac. Sci. Technol. A  16  1031-6  (1998)  10.1116/1.581227 45 Citations
  14. Bi-induced structures on Si(001)
    K. Miki, J. H. G. Owen, D. R. Bowler, G. A. D. Briggs, and K. Sakamoto
    Surf. Sci.  421  397-418  (1999)  10.1016/S0039-6028(98)00870-X 81 Citations
  15. Atomically perfect bismuth lines on Si(001)
    K. Miki, D. R. Bowler, J. H. G. Owen, G. A. D. Briggs, and K. Sakamoto
    Phys. Rev. B  59  14868-14871  (1999)  10.1103/PhysRevB.59.14868 83 Citations
  16. Bismuth and antimony nanolines in a Si epitaxial layer
    K. Miki, H. Matsuhata, K. Sakamoto, G. A. D. Briggs, J. H. G. Owen, and D. R. Bowler
    Inst. Phys. Conf. Ser.  164  167-170  (1999)  Citations
  17. Growth Oscillation Decay Rates for Control of III-V Molecular Beam Epitaxy near Stoichiometry
    J. H. G. Owen, W. Barvosa-Carter, and J. J. Zinck
    Appl. Phys. Lett.  76  3070-2  (2000)  10.1063/1.126582 12 Citations
  18. Surface reconstructions for InAs(001) studied by Density Functional Theory and STM
    C. Ratsch, W. Barvosa-Carter, F. Grosse, J. H. G. Owen, and J. J. Zinck
    Phys. Rev. B  62  R7719  (2000)  10.1103/PhysRevB.62.R7719 23 Citations
  19. An experimental-theoretical study of the behaviour of hydrogen on the Si(001) surface.
    D. R. Bowler, J. H. G. Owen, C. M. Goringe, K. Miki, and G. A. D. Briggs
    J.Phys.:Condens. Matter  12  7655-7670  (2000)  10.1088/0953-8984/12/35/301 28 Citations
  20. In situ Threshold Photoemission Yields Correlated to Surface Reconstructions of InAs (001)
    J. J. Zinck, R. S. Ross, J. H. G. Owen, W. Barvosa-Carter, F. Grosse, and C. Ratsch
    Appl. Phys. Lett.  79  2354-6  (2001)  10.1063/1.1406552 4 Citations
  21. Structure of Bi nanolines: using tight-binding to explore parameter space
    D. R. Bowler and J. H. G. Owen
    J. Phys. Cond. Matt.  14  6761  (2002)  10.1088/0953-8984/14/26/314 21 Citations
  22. Atomic scale structure of InAs(001)-(2×4) steady-state surfaces determined by scanning tunneling microscopy and density functional theory
    W. Barvosa-Carter, R. S. Ross, C. Ratsch, F. Grosse, J. H. G. Owen, and J. J. Zinck
    Surf. Sci. Lett.  499  L129-134  (2002)  10.1016/S0039-6028(01)01638-7 27 Citations
  23. Bi nanoline passivity to attack by radical hydrogen or oxygen
    J. H. G. Owen, D. R. Bowler, S. Kusano, and K. Miki
    Surf. Sci. Lett.  499  L124-L128  (2002)  10.1016/S0039-6028(01)01912-4 33 Citations
  24. Stress Relief as the Driving Force for Self-Assembled Bi Nanolines
    J. H. G. Owen, K. Miki, H. Koh, H. W. Yeom, and D. R. Bowler
    Phys. Rev. Lett.  88  226104  (2002)  10.1103/PhysRevLett.88.226104 82 Citations
  25. Measurement of V/III ratio using threshold photoemission
    J. J. Zinck, J. H. G. Owen, and W. Barvosa-Carter
    J. Vac. Sci. Technol. B  21  1126-1128  (2003)  10.1116/1.1576398 1 Citation
  26. Interaction between strain and electronic structure in the Bi nanoline
    J. H. G. Owen, D. R. Bowler, and K. Miki
    Surf. Sci. Lett.  527  L177-183  (2003)  10.1016/S0039-6028(03)00029-3 32 Citations
  27. Short-range and long-range strain fields of Bi atomic lines
    J. H. G. Owen, D. R. Bowler, and K. Miki
    Mat. Sci. Technol.  20  955  (2004)  10.1179/026708304225019768 5 Citations
  28. NH$_3$ on Si(001): Self-organized patterns of adsorbates investigated by a combination of scanning tunneling microscopy experiments and density functional theory calculations
    J. H. G. Owen, D. R. Bowler, S. Kusano, and K. Miki
    Phys. Rev. B  72  113304  (2005)  10.1103/PhysRevB.72.113304 28 Citations
  29. Isolation, Spectroscopic Characterization, and Study of Island Formation of Two Isomers of the Metallofullerene Nd@C82
    K. Porfyrakis, D. F. Leigh, J. H. G. Owen, S. M. Lee, M. Kanai, G. Morley, A. Ardavan, T. J. F. Dennis, D. G. Pettifor, and G. A. D. Briggs  Meeting Abstracts  2  1663  (2005)
  30. Distinguishing two isomers of Nd@C$_82$ by STM and DFT
    D. F. Leigh, J. H. G. Owen, S. M. Lee, K. Porfyrakis, A. Ardavan, and G. A. D. Briggs
    Chem. Phys. Lett.  414  307-310  (2005)  10.1016/j.cplett.2005.08.090 13 Citations
  31. Identification of intermediate linear structure formed during Bi/Si(001) surface anneal
    J. H. G. Owen, D. R. Bowler, S. Kusano, and K. Miki
    Surf. Sci.  596  163-175  (2005)  10.1016/j.susc.2005.09.012 11 Citations
  32. 1-D Epitaxial Growth of Indium on a Self-Assembled atomic-scale Bismuth template
    J. H. G. Owen and K. Miki
    Nanotechnology  17  430-433  (2006)  10.1088/0957-4484/17/2/014 24 Citations
  33. Isolation, Spectroscopic Characterization, and Study of Island Formation of Two Isomers of the Metallofullerene Nd@C82
    K. Porfyrakis, D. F. Leigh, J. H. G. Owen, S. M. Lee, M. Kanai, G. Morley, A. Ardavan, T. J. F. Dennis, D. G. Pettifor, and G. A. D. Briggs
    ECS Transactions  1  43-49  (2006)  10.1149/1.2214618
  34. Nanoline Templating of metals and the underlying surface processes
    J. H. G. Owen and K. Miki
    Mat. Res. Soc. Proc.    0901-Ra13-02  (2006)
  35. Bi nanolines on Si(001): registry with substrate
    D. R. Bowler, J. H. G. Owen, and K. Miki
    Nanotechnology  17  1801-1802  (2006)  10.1088/0957-4484/17/6/N01 4 Citations
  36. Thermal stability of Al nanocluster arrays on Si(111)-7 x 7 surfaces
    R.-W. Li, S. Kusano, J. H. G. Owen, and K. Miki
    Nanotechnology  17  2018-2022  (2006)  10.1088/0957-4484/17/8/038 8 Citations
  37. 1-D semiconducting atomic chain of In and Bi on Si(001)
    D. R. Bowler, C. F. Bird, and J. H. G. Owen
    J.Phys.:Condens. Matter  18  L241-L249  (2006)  10.1088/0953-8984/18/19/L03 7 Citations
  38. Dynamic behavior and phase transition of magic Al clusters on Si(111)-7×7 surfaces
    R.-W. Li, J. H. G. Owen, S. Kusano, and K. Miki
    Appl. Phys. Lett.  89  073116  (2006)  10.1063/1.2337522 10 Citations
  39. Growth of Ag nanoclusters on a 1-nm template
    J. H. G. Owen and K. Miki
    Surf. Sci.  600  2943-2953  (2006)  10.1016/j.susc.2006.05.046 19 Citations
  40. Self-assembled nanowires on semiconductor surfaces
    J. H. G. Owen, K. Miki, and D. R. Bowler
    J. Mat. Sci.  41  4568-4603  (2006)  10.1007/s10853-006-0246-x 65 Citations
  41. Al nanocluster arrays on Si(111)-7×7 surfaces: Formation process and interactions among clusters
    R.-W. Li, H. Liu, J. H. G. Owen, Y. Wakayama, K. Miki, and H. W. Yeom
    Phys. Rev. B  76  075418  (2007)  10.1103/PhysRevB.76.075418 9 Citations
  42. Self-assembly of trimetallic nitride template fullerenes on surfaces studied by STM
    D. F. Leigh, C. Norenberg, D. Cattaneo, J. H. G. Owen, K. Porfyrakis, A. L. Bassi, A. Ardavan, and G. A. D. Briggs
    Surf. Sci.  601  2750–2755  (2007)  10.1016/j.susc.2006.12.035 16 Citations
  43. Molecular interactions and decomposition pathways of NH3 on Si(001)
    D. R. Bowler and J. H. G. Owen
    Phys. Rev. B  75  155310  (2007)  10.1103/PhysRevB.75.155310 26 Citations
  44. Self-assembly and electronic effects of Er3N@C80 and Sc3N@C80 on Au(111) and Ag/Si(111) surfaces
    C. Norenberg, D. F. Leigh, D. Cattaneo, K. Porfyrakis, A. L. Bassi, C. S. Casari, M. Passoni, J. H. G. Owen, and G. A. D. Briggs
    Journal of Physics: Conference Series  100  052080 (4pp)  (2008)  10.1088/1742-6596/100/5/052080 3 Citations
  45. Structure and Electronic Properties of Atomic-Scale In-Bi Nanowire Arrays
    J. H. G. Owen, O. Kubo, and D. R. Bowler
    Mat. Res. Soc. Proc.    #1080-O03-06  (2008)
  46. A scanning tunnelling microscopy investigation into the initial stages of copper phthalocyanine growth on passivated silicon surfaces
    J. Gardener, J. H. G. Owen, K. Miki, and S. Heutz
    Surf. Sci.  602  843-851  (2008)  10.1016/j.susc.2007.11.031 17 Citations
  47. Co-adsorption patterns of NH$_3$ on Si(001) : Comment on “The ordering of the adsorbed NH3 molecules across the Si dimer rows on the Si(001) surface”
    J. H. G. Owen and D. R. Bowler
    Surf. Sci.  602  3760–3762  (2008)  10.1016/j.susc.2008.09.045 5 Citations
  48. Competing interactions in molecular adsorption: NH3 on Si(001)
    J. H. G. Owen
    Journal of Physics: Condensed Matter  21  443001 (24pp)  (2009)  10.1088/0953-8984/21/44/443001 15 Citations
  49. The Origin of Inter-dimer-row correlated adsorption for NH3 on Si(001)
    J. H. G. Owen and D. R. Bowler
    Surf. Sci.  603  2902 — 2906  (2009)  10.1016/j.susc.2009.07.042 2 Citations
  50. Electronic structure of Bi lines on clean and H-passivated Si(100)
    J. Javorský, J. H. G. Owen, M. Setvín, and K. Miki
    J. Phys: Cond. Mat.  22  175006  (2010)  10.1088/0953-8984/22/17/175006 Citations
  51. One dimensional Si-in-Si(001) template for single-atom wire growth
    J. H. G. Owen, F. Bianco, S. A. K¨oster, D. Mazur, D. R. Bowler, and C. Renner
    Appl.Phys.Lett.  97  093102  (2010)  10.1063/1.3483164 5 Citations
  52. Manganese silicide nanowires on Si(001)
    H. J. Liu, J. H. G. Owen, K. Miki, and C. Renner
    Journal of Physics: Condensed Matter  23  172001  (2011)  10.1088/0953-8984/23/17/172001 3 Citations
  53. One-dimensional Mn atom chains templated on a Si(001) surface
    S. A. Koster, J. H. G. Owen, F. Bianco, A. M. P. Sena, D. R. Bowler, and C. Renner
    In Preparation  (2011)
  54. Multiscale Hydrogen Depassivation Lithography using a Scanning Tunneling Microscope
    J. Ballard, J. H. G. Owen, J. N. Randall, J. Alexander, and J. R. Von Ehr
    J. Vac. Sci. Technol. B    Submitted June 2011  (2011)
  55. Endotaxial Silicon Nanowires in Si(001):H
    F. Bianco, J. H. G. Owen, S. A. K”oster, D. Mazur, C. Renner, and D. R. Bowler
    Phys. Rev. B  84  035328  (2011)  10.1103/PhysRevB.84.035328 4 Citations
  56. Patterned Atomic Layer Epitaxy of Si / Si(001):H
    J. H. G. Owen, J. Ballard, J. N. Randall, J. Alexander, and J. R. Von Ehr
    J. Vac. Sci. Technol. B  29  06F201  (2011)  10.1116/1.3628673 2 Citations
  57. Si2H6 Dissociative Chemisorption and Dissociation on Si(100)-(2×1) and Ge(100)-(2×1)
    J.-F. Veyan, H. Choi, M. Huang, R. C. Longo Pazos, J. B. Ballard, S. McDonnell, M. P. Nadesalingam, H. Dong, I. S. Chopra, J. H. G. Owen, W. P. Kirk, J. Randall, R. M. Wallace, K. Cho, and Y. J. Chabal
    J. Phys. Chem. C  115  24534–24548  (2011)  10.1021/jp207086u 4 Citations
  58. Degenerate electronic structure of reconstructed MnSi 1.7 nanowires on Si(001)
    H. J. Liu, J. H. G. Owen, and K. Miki
    Journal of Physics: Condensed Matter  24  095005  (2012)  10.1088/0953-8984/24/9/095005 2 Citations
  59. Automated Scanning Tunneling Microscope image analysis of Si (100):H 2×1 surfaces
    J. N. Randall, J. R. V. Ehr, J. B. Ballard, J. H. G. Owen, and E. Fuchs
    Microelectronic Engineering  98  214 – 217  (2012)  10.1016/j.mee.2012.07.021 4 Citations
  60. Atomically Precise Manufacturing: The Opportunity, Challenges, and Impact
    J. N. Randall, J. R. Von Ehr, J. Ballard, J. Owen, R. Saini, E. Fuchs, H. Xu, and S. Chen
    89-106  (2012)  10.1007/978-3-642-28172-3_7 Citations
  61. Mn Silicide Nanowires on the Si(001)-2×1 Surface Having Anisotropic Strain Fields with Bi Nanolines
    K. Miki, H. Liu, and J. H. G. Owen
    Meeting Abstracts  MA2012-02  2662  (2012)
  62. Multimode hydrogen depassivation lithography: A method for optimizing atomically precise write times
    J. B. Ballard, T. W. Sisson, J. H. G. Owen, W. R. Owen, E. Fuchs, J. Alexander, J. N. Randall, and J. R. Von Ehr
    Journal of Vacuum Science & Technology B  31  06FC01  (2013)  http://dx.doi.org/10.1116/1.4823756 1 Citations
  63. Scalable Patterning of One-Dimensional Dangling Bond Rows on Hydrogenated Si(001)
    F. Bianco, D. R. Bowler, J. H. G. Owen, S. A. Köster, M. Longobardi, and C. Renner
    ACS Nano  7  4422-4428  (2013)  10.1021/nn4010236 1 Citation
  64. Controlling the Atomic Layer Deposition of Titanium Dioxide on Silicon: Dependence on Surface Termination
    S. McDonnell, R. C. Longo, O. Seitz, J. B. Ballard, G. Mordi, D. Dick, J. H. G. Owen, J. N. Randall, J. Kim, Y. J. Chabal, K. Cho, and R. M. Wallace
    The Journal of Physical Chemistry C  117  20250-20259  (2013)  10.1021/jp4060022 4 Citations
  65. Patterned Atomic Layer Deposition on Scanning Tunneling Microscope constructed templates
    A. Azcatl, J. Ballard, Y. Chabal, C. K-J., D. Dick, J. H. G. Owen, R. C. Longo, S. McDonnell, G. Mordi, P. Campbell, J. N. Randall, and R. Wallace
    Nanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational  2  481-484  (2013)
  66. Mn Silicide Nanowires on the Si(001)-2×1 Surface Having Anisotropic Strain Fields with Bi Nanolines
    K. Miki, H. Liu, and J. H. G. Owen
    ECS Transactions  50  17-23  (2013)  10.1149/05006.0017ecst
  67. Spurious dangling bond formation during atomically precise hydrogen depassivation lithography on Si(100): The role of liberated hydrogen
    J. B. Ballard, J. H. G. Owen, J. D. Alexander, W. R. Owen, E. Fuchs, J. N. Randall, R. C. Longo, and K. Cho
    Journal of Vacuum Science & Technology B  32  021805  (2014)  http://dx.doi.org/10.1116/1.4864302
  68. Ab Initio Study of H2 Associative Desorption on Ad-Dimer Reconstructed Si(001) and Ge(001)-(2×1) Surfaces
    R. C. Longo, J. H. G. Owen, S. McDonnell, J. B. Ballard, R. M. Wallace, J. N. Randall, Y. J. Chabal, and K. Cho
    The Journal of Physical Chemistry C  118  10088-10096  (2014)  10.1021/jp411903z
  69. Pattern transfer of hydrogen depassivation lithography patterns into silicon with atomically traceable placement and size control
    J. B. Ballard, J. H. G. Owen, W. Owen, J. R. Alexander, E. Fuchs, J. N. Randall, J. R. Von Ehr, S. McDonnell, D. D. Dick, R. M. Wallace, Y. J. Chabal, M. R. Bischof, D. L. Jaeger, R. F. Reidy, J. Fu, P. Namboodiri, K. Li, and R. M. Silver
    Journal of Vacuum Science & Technology B  32  041804  (2014)  10.1116/1.4890484
  70. Digermane Deposition on Si(100) and Ge(100): from Adsorption Mechanism to Epitaxial Growth
    D. Dick, J.-F. Veyan, R. C. Longo, S. McDonnell, J. B. Ballard, X. Qin, H. Dong, J. H. G. Owen, J. N. Randall, R. M. Wallace, K. Cho, and Y. J. Chabal
    The Journal of Physical Chemistry C  118  482-493  (2014)  10.1021/jp410145u
  71. Selectivity of metal oxide atomic layer deposition on hydrogen terminated and oxidized Si(001)-(2×1) surface
    R. C. Longo, S. McDonnell, D. Dick, R. M. Wallace, Y. J. Chabal, J. H. G. Owen, J. B. Ballard, J. N. Randall, and K. Cho
    Journal of Vacuum Science & Technology B  32  03D112  (2014)  10.1116/1.4864619
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