Chemical Routes for Transfer of Atomic-Scale Patterns
J. H. G. Owen,  Encycl. Interfacial Chem. Surf. Sci. Electrochem. (2017). [doi:10.1016/B978-0-12-409547-2.13149-X]

Toward Selective Ultra-High-Vacuum Atomic Layer Deposition of Metal Oxides on Si(100),
D. Dick, J. B. Ballard, R. C. Longo, J. N. Randall, K. Cho, and Y. J. Chabal,
J. Phys. Chem. C, vol. 120, no. 42, pp. 24213–24223, (2016). [doi:10.1021/acs.jpcc.6b08130]

Toward Atomic-Scale Patterned Atomic Layer Deposition: Reactions of Al2O3 Precursors on a Si(001) Surface with Mixed Functionalizations
R. C. Longo, J. H. G. Owen, S. McDonnell, D. Dick, J. B. Ballard, J. N. Randall, R. M. Wallace, Y. J. Chabal, and K. Cho,
J. Phys. Chem. C, vol. 120, no. 5, pp. 2628–2641, (2016). [doi:10.1021/acs.jpcc.5b09053]

Atomically Traceable Nanostructure Fabrication
Ballard, Josh B. and Dick, Don D. and McDonnell, Stephen J. and Bischof, Maia and Fu, Joseph and Owen, James HG and Owen, William R. and Alexander, Justin D. and Jaeger, David L. and Namboodiri, Pradeep and Fuchs, Ehud and Chabal, Yves J. and Wallace, Robert M. and Reidy, Richard and Silver, Richard M. and Randall, John N. and Von Ehr, James
JoVE (Journal of Visualized Experiments) (2015) [doi:10.3791/52900]

Selectivity of metal oxide atomic layer deposition on hydrogen terminated and oxidized Si (001)-(2×1) surface
Longo, Roberto C. and McDonnell, Stephen and Dick, D. and Wallace, Robert M. and Chabal, Yves J. and Owen, James HG and Ballard, Josh B. and Randall, John N. and Cho, Kyeongjae
Journal of Vacuum Science & Technology B 32(3), 03D112 (2014) [doi:10.1116/1.4864619] [PDF]

Ab Initio Study of H2 Associative Desorption on Ad-Dimer Reconstructed Si (001) and Ge (001)-(2×1) Surfaces
Longo, R. C. and Owen, J. H. G. and McDonnell, S. and Ballard, J. B. and Wallace, R. M. and Randall, J. N. and Chabal, Y. J. and Cho, K.
The Journal of Physical Chemistry C 118(19), 10088–10096 (2014) [doi:10.1021/jp411903z]

Pattern transfer of hydrogen depassivation lithography patterns into silicon with atomically traceable placement and size control
Ballard, Joshua B. and Owen, James HG and Owen, William and Alexander, Justin R. and Fuchs, Ehud and Randall, John N. and Von Ehr, James R. and McDonnell, Stephen and Dick, Don D. and Wallace, Robert M. and others
Journal of Vacuum Science & Technology B 32(4), 041804 (2014) [doi:10.1116/1.4890484] [PDF]

Spurious dangling bond formation during atomically precise hydrogen depassivation lithography on Si (100): The role of liberated hydrogen
Ballard, Joshua B. and Owen, James HG and Alexander, Justin D. and Owen, William R. and Fuchs, Ehud and Randall, John N. and Longo, Roberto C. and Cho, Kyeongjae
Journal of Vacuum Science & Technology B 32(2), 021805 (2014) [doi:10.1116/1.4864302] [PDF]

Controlling the Atomic Layer Deposition of Titanium Dioxide on Silicon: Dependence on Surface Termination
McDonnell, Stephen and Longo, Roberto C. and Seitz, Oliver and Ballard, Josh B. and Mordi, Greg and Dick, Don and Owen, James H. G. and Randall, John N. and Kim, Jiyoung and Chabal, Yves J. and Cho, Kyeongjae and Wallace, Robert M.
The Journal of Physical Chemistry C 117(39), 20250–20259 (2013) [doi:10.1021/jp4060022]

Digermane Deposition on Si (100) and Ge (100): from Adsorption Mechanism to Epitaxial Growth
Dick, Don and Veyan, Jean-Francois and Longo, R. C. and McDonnell, Stephen and Ballard, Josh B. and Qin, Xiaoye and Dong, Hong and Owen, James HG and Randall, John N. and Wallace, Robert M. and others
The Journal of Physical Chemistry C 118(1), 482–493 (2013) [doi:10.1021/jp410145u]

A density-functional theory study of tip electronic structures in scanning tunneling microscopy
Choi, Heesung and Longo, Roberto C. and Huang, Min and Randall, John N. and Wallace, Robert M. and Cho, Kyeongjae
Nanotechnology 24(10), 105201 (2013) [doi:10.1088/0957-4484/24/10/105201]

Multimode hydrogen depassivation lithography: A method for optimizing atomically precise write times
Ballard, Joshua B. and Sisson, Thomas W. and Owen, James HG and Owen, William R. and Fuchs, Ehud and Alexander, Justin and Randall, John N. and Von Ehr, James R.
Journal of Vacuum Science & Technology B 31(6), 06FC01 (2013) [doi:10.1116/1.4823756]

Atomically-precise three-dimensional top down fabrication
Ballard, J. B. and Owen, J. H. G. and Fuchs, Emmerich and McDonnell, S. and Dick, D. and Mordi, G. and Azcatl, A. and Seitz, O. and Campbell, P. and Veyan, J. F. and others
In Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII: The 17th International Conference on, IEEE, (2013)[doi:10.1109/Transducers.2013.6626878]

Patterned Atomic Layer Deposition on Scanning Tunneling Microscope constructed templates
A. Azcatl, J. Ballard, Y. Chabal, K.-J. Cho, D. Dick, J. Owen, R. Longo, S. McDonnell, G. Mordi, J. Randall, R. Wallace
In Nanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational, 2 (2013)

Field-directed sputter sharpening for tailored probe materials and atomic-scale lithography
Schmucker, Scott W. and Kumar, Navneet and Abelson, John R. and Daly, Scott R. and Girolami, Gregory S. and Bischof, Maia R. and Jaeger, David L. and Reidy, Rick F. and Gorman, Brian P. and Alexander, Justin and others
Nature communications 3, 935 (2012) [doi:10.1038/ncomms1907] [PDF]

Atomic Scale Interconnection Machines
Randall, John N and Von Ehr, James R and Ballard, Joshua and Owen, James and Saini, Rahul and Fuchs, Ehud and Xu, Hai and Chen, Shi
Springer Berlin Heidelberg, (2012)

Atomically Precise Manufacturing: The Opportunity, Challenges, and Impact
Randall, John N. and Von Ehr, James R. and Ballard, Joshua and Owen, James and Saini, Rahul and Fuchs, Ehud and Xu, Hai and Chen, Shi
In Atomic Scale Interconnection Machines, Springer, (2012)

Automated Scanning Tunneling Microscope image analysis of Si (100): H 2×1 surfaces
Randall, J. N. and Von Ehr, J. R. and Ballard, J. B. and Owen, J. H. G. and Fuchs, E.
Microelectronic Engineering 98, 214–217 (2012) [doi:10.1016/j.mee.2012.07.021]

Patterning of sub-1 nm dangling-bond lines with atomic precision alignment on H:Si(100) surface at room temperature.
Chen, S and Xu, H and Goh, K E J and Liu, Lerwen and Randall, J N
Nanotechnology 23(27), 275301 (2012) [doi:10.1088/0957-4484/23/27/275301]

Si2H6 Dissociative Chemisorption and Dissociation on Si (100)-(2×1) and Ge (100)-(2×1)
Veyan, Jean-Francois and Choi, Heesung and Huang, Min and Longo, R. C. and Ballard, Josh B. and McDonnell, Stephen and Nadesalingam, Manori P. and Dong, Hong and Chopra, Irinder S. and Owen, James HG and others
The Journal of Physical Chemistry C 115(50), 24534–24548 (2011) [doi:10.1021/jp207086u]

Patterned Atomic Layer Epitaxy of Si / Si(001):H
Owen, J H G and Ballard, J and Randall, J N and Alexander, J and Von Ehr, J R
J. Vac. Sci. Technol. B 29(6), 06F201 (2011) [doi:10.1116/1.3628673] [PDF]

Using patterned H-resist for controlled three-dimensional growth of nanostructures
Goh, K E J and Chen, S and Xu, H and Ballard, J and Randall, J N and Ehr, J R Von
Applied Physics Letters 98(16), 163102 (2011) [doi:10.1063/1.3582241] [PDF]

Atomic precision patterning on Si: An opportunity for a digitized process
Randall, J.N. and Ballard, J.B. and Lyding, J.W. and Schmucker, S. and Von Ehr, J.R. and Saini, R. and Xu, H. and Ding, Y.
Microelectronic Engineering 87(5-8), 955–958 (2010) [doi:10.1016/j.mee.2009.11.143]

Mediation of Electrostatic Discharge Induced Morphological Damage in Atomically Precise Tips
Gorman, Bp and Ballard, J and Romanes, M and Jaeger, D and Reidy, R and Randall, J
Microscopy and Microanalysis 16(Supplement S2), 480–481 (2010) [doi:10.1017/S1431927610059878]

Atomic precision lithography on Si
Randall, J N and Lyding, J W and Schmucker, S and Von Ehr, J R and Ballard, J and Saini, R and Xu, H and Ding, Y
J. Vac. Sci. Technol. B 27(6), 2764–2768 (2009) [doi:10.1116/1.3237096] [PDF]

High rate gas dosing for tip based nanofabrication processes
Kanouff, Michael P. and Randall, J. N. and Nadesalingham, M. and Kirk, W. P. and Wallace, R. M.
Journal of Vacuum Science & Technology B 27(6), 2769–2775 (2009) [doi:10.1116/1.3259955] [PDF]

Theoretical and Experimental Study of Tip Electronic Structure in Scanning Tunneling Microscope
Choi, HeeSung and Huang, Min and Ballard, Joshua B. and He, Kevin T. and Schmucker, Scott W. and Lyding, Joseph N. and Randall, John N. and Cho, Kyeongjae
In MRS Proceedings, 1177, 1177–Z06 Cambridge Univ Press, (2009) [doi:10.1557/PROC-1177-Z06-03]

The nanotech impact on IC processing: near and long term
Randall, John N. and Stallcup, Richard and Cavanah, Taylor
In SPIE 31st International Symposium on Advanced Lithography, International Society for Optics and Photonics, (2006) [doi:10.1117/12.659558]

Theoretical analysis of diamond mechanosynthesis. Part III. Positional C2 deposition on diamond C (110) surface using Si/Ge/Sn-based dimer placement tools
Peng, Jingping and Freitas, Robert A. and Merkle, Ralph C. and Von Ehr, James R. and Randall, John N. and Skidmore, George D.
Journal of Computational and Theoretical Nanoscience 3(1), 28–41 (2006) [doi:10.1166/jctn.2006.003]

First-Principles Calculation of Hydrogen Diffusion Barriers on Si(001)-2 × 1 Surface
Peng, Jingping and Mann, David J. and Randall, John
Journal of Computational and Theoretical Nanoscience 2(2), 293–297 (2005) [doi:10.1166/jctn.2005.114]

Characterization of assembled MEMS
Jandric, Zoran and Randall, John N. and Saini, Rahul and Nolan, Michael and Skidmore, George
In MOEMS-MEMS Micro & Nanofabrication, International Society for Optics and Photonics, (2005)[doi:10.1117/12.596300]

Fabrication of high-density nanostructures with an atomic force microscope
Liu, Jun-Fu and Ehr, James R. Von and Baur, Christof and Stallcup, Richard and Randall, John and Bray, Ken
Applied Physics Letters 84(8), 1359–1361 (2004) [doi:10.1063/1.1647281]